GT5G131 2003-01-31 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT5G131 strobe flash applications 3-v gate drive voltage: v ge = 3.0 v (min) (@i c = 130 a) supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) igbt enhancement-mode peak collector current: i c = 130 a (max) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 400 v dc v ges 6 gate-emitter voltage pulse v ges 8 v dc i c 5 collector current 1 ms i cp 130 a collector power dissipation (note 1) p c 1.1 w junction temperature t j 150 c storage temperature range t stg 55~150 c note 1: drive operation: mount on glass epoxy board [1 inch 2 1.5 t] these devices are mos type. users should follow proper esd handling procedures. operating condition of turn-off dv/dt should be lower than 400 v/ s. unit: mm jedec D jeita D toshiba 2-6j1c weight: 0.080 g (typ.) equivalent circuit 1 2 3 4 5 7 8 6
GT5G131 2003-01-31 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 6 v, v ce 0 10 a collector cut-off current i ces v ce 400 v, v ge 0 10 a gate-emitter cut-off voltage v ge (off) i c 1 ma, v ce 5 v 0.5 1.0 v collector-emitter saturation voltage v ce (sat) i c 130 a, v ge 3 v 2.2 7.0 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 2800 pf rise time t r 1.3 turn-on time t on 1.4 fall time t f 1.5 switching time turn-off time t off 1.8 s thermal resistance (note 2) r th (j-a) 114 c/w note 2: drive operation: mount on glass epoxy board [1 inch 2 1.5 t] marking v in : t r 100 ns t f 100 ns duty cycle 1% 3 v 0 30 300 v 2.3 GT5G131 type on lower left of the marking indicates pin 1. lot no. weekly code: (three digits) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one low-order digits of calendar year)
GT5G131 2003-01-31 3 collector current i c (a) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) i c ? v ce 5 200 160 120 80 40 0 0 1 2 3 4 common emitter tc 40c 3.0 2.5 3.5 v ge 2.0 v 5 200 160 120 80 40 0 1 2 3 4 common emitter tc 70c 3.0 3.5 2.5 v ge 2.0 v 0 5 200 160 120 80 40 0 0 1 2 3 4 common emitter tc 125c 3.0 3.5 v ge 2.0 v 2.5 160 3 2.5 1.5 1 0.5 0 80 40 0 40 80 120 common emitter v ge 3 v i c 130 a 100 70 40 2 5 200 160 120 80 40 0 0 1 2 3 4 common emitter v ce 5 v 125 70 25 tc 40c 5 200 160 120 80 40 0 0 1 2 3 4 common emitter tc 25c 3.0 3.5 2.5 v ge 2.0 v
GT5G131 2003-01-31 4 gate-emitter cut-off voltage v ge (off) (v) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge case temperature tc (c) v ge (off) ? tc collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) v ce ? v ge 5 5 4 3 2 1 0 0 1 2 3 4 common emitter tc 25c 70 i c 130 a 100 40 5 5 4 3 2 1 0 0 1 2 3 4 common emitter tc 70c 70 i c 130 a 100 40 5 5 4 3 2 1 0 0 1 2 3 4 common emitter tc 125c 70 i c 130 a 100 40 160 1.4 1.2 0.8 0.4 0 80 40 0 40 80 120 common emitter v ce 5 v i c 1 ma 1 0.6 0.2 10000 1000 100 1 10 1000 10 100 common emitter v ge 0 v f 1 mhz tc 25c c ies c oes c res 5 5 4 3 2 1 0 0 1 2 3 4 common emitter tc 40c 70 i c 130 a 100 40
GT5G131 2003-01-31 5 peak collector current i cp (a) main capacitance c m ( f) switching time ? r g switching time ( s) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) switching time ? i cp switching time ( s) peak collector current i cp (a) maximum operating area minimum gate drive area gate resistance r g ( ) collector current i c (a) gate-emitter voltage v ge (v) 200 800 600 400 200 0 0 40 80 120 160 v cm 350 v tc 70c v ge 4 v 10 r g 300 200 160 120 80 40 0 0 2 tc 25c 4 6 8 70 common emitter v cc 300 v r l 2.3 tc 25c 0 0 40 60 80 0 2 4 6 8 10 100 200 300 400 500 v ce 20 v ge 1000 10 0.1 1 10 1 100 common emitter v ce 300 v v ge 3 v i c 130 a tc 25c t on t off t f t r 200 0 50 100 150 1 0.1 10 common emitter v cc 300 v v ge 3 v r g 30 tc 25c t off t r t on t f
GT5G131 2003-01-31 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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